IPD50R650CEAUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

500V

Rds On Max :

650 mΩ

Number of Pins :

3

Fall Time (Typ) :

13 ns

Number of Terminations :

2

Power Dissipation :

47W

ECCN Code :

EAR99

Factory Lead Time :

18 Weeks

Element Configuration :

Single

Max Power Dissipation :

47W

Rise Time :

5ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Polarity/Channel Type :

N-Channel

Drain to Source Voltage (Vdss) :

500V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

6.1A

Case Connection :

DRAIN

Number of Elements :

1

Turn-Off Delay Time :

27 ns

Package / Case :

TO-252-3

Published :

2008

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Input Capacitance :

342pF

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Number of Channels :

1

Drain to Source Resistance :

650mOhm

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

6 ns

Min Operating Temperature :

-55°C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Operating Temperature :

150°C

Pbfree Code :

yes

JESD-30 Code :

R-PSSO-G2

Weight :

3.949996g

RoHS Status :

ROHS3 Compliant