IPD50R520CPATMA1
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- Mfr.Part #
- IPD50R520CPATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252
- Datasheet
- Download
- Description
- LOW POWER_LEGACY
- Stock
- 27,564
- In Stock ：
- 27,564
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Termination :
- SMD/SMT
- Length :
- 6.73mm
- Height :
- 2.41mm
- Number of Elements :
- 1
- Turn On Delay Time :
- 35 ns
- Turn-Off Delay Time :
- 80 ns
- Drain to Source Resistance :
- 520mOhm
- Dual Supply Voltage :
- 550V
- Continuous Drain Current (ID) :
- 7.1A
- Element Configuration :
- Single
- Nominal Vgs :
- 3 V
- Fall Time (Typ) :
- 17 ns
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Input Capacitance :
- 680pF
- Rds On Max :
- 520 mΩ
- Number of Pins :
- 3
- Power Dissipation :
- 66W
- Max Power Dissipation :
- 66W
- Package / Case :
- TO-252
- Max Operating Temperature :
- 150°C
- Drain to Source Voltage (Vdss) :
- 500V
- Threshold Voltage :
- 3V
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 14ns
- Published :
- 2008
- Min Operating Temperature :
- -55°C
- Drain to Source Breakdown Voltage :
- 550V
- Width :
- 6.22mm
- REACH SVHC :
- No SVHC
- Gate to Source Voltage (Vgs) :
- 20V
- Max Dual Supply Voltage :
- 500V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Datasheets
- IPD50R520CPATMA1
Tape & Reel (TR) 500V TO-252
IPD50R520CPATMA1 Overview
Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 7.1A.When VGS=550V, and ID flows to VDS at 550VVDS, the drain-source breakdown voltage is 550V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 80 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 520mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 35 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 500V power supply, it is capable of handling a dual voltage maximum.This transistor's threshold voltage is 3V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.
IPD50R520CPATMA1 Features
a continuous drain current (ID) of 7.1A
a drain-to-source breakdown voltage of 550V voltage
the turn-off delay time is 80 ns
single MOSFETs transistor is 520mOhm
a threshold voltage of 3V
a 500V drain to source voltage (Vdss)
IPD50R520CPATMA1 Applications
There are a lot of Infineon Technologies
IPD50R520CPATMA1 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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