IPD50R500CEAUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Max Dual Supply Voltage :

500V

Rds On (Max) @ Id, Vgs :

500m Ω @ 2.3A, 13V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

129 mJ

Pbfree Code :

yes

ECCN Code :

EAR99

Number of Terminations :

2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Contains Lead

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

550V

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Power Dissipation-Max :

57W Tc

Gate Charge (Qg) (Max) @ Vgs :

18.7nC @ 10V

Pulsed Drain Current-Max (IDM) :

24A

Case Connection :

DRAIN

Reach Compliance Code :

not_compliant

Current - Continuous Drain (Id) @ 25°C :

7.6A Tc

Series :

CoolMOS™

Transistor Element Material :

SILICON

Factory Lead Time :

18 Weeks

Vgs(th) (Max) @ Id :

3.5V @ 200µA

Drain-source On Resistance-Max :

0.5Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

13V

Published :

2005

RoHS Status :

ROHS3 Compliant

Halogen Free :

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds :

433pF @ 100V

Packaging :

Tape and Reel (TR)

Number of Elements :

1