IPD50R399CP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

550V

Pin Count :

4

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

9A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

399m Ω @ 4.9A, 10V

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

890pF @ 100V

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

500V

Pbfree Code :

yes

Transistor Application :

SWITCHING

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

215 mJ

FET Type :

N-Channel

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Terminal Position :

Single

Vgs(th) (Max) @ Id :

3.5V @ 330μA

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Reach Compliance Code :

Compliant

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

20A

JEDEC-95 Code :

TO-252AA

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Series :

CoolMOS™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.399Ohm

Power Dissipation-Max :

83W Tc

Published :

2007

Terminal Finish :

Tin

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

RoHS Compliant