IPD50R380CEBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

13V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

24.8nC @ 10V

Avalanche Energy Rating (Eas) :

173 mJ

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

9.9A Tc

Packaging :

Cut Tape (CT)

Case Connection :

DRAIN

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

32.4A

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

380m Ω @ 3.2A, 13V

Transistor Element Material :

SILICON

FET Feature :

Super Junction

DS Breakdown Voltage-Min :

500V

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.5V @ 260μA

Power Dissipation-Max :

73W Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Published :

2014

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

500V

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Series :

CoolMOS™

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

584pF @ 100V

Surface Mount :

yes

Pbfree Code :

No

Drain-source On Resistance-Max :

0.38Ohm

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

14.1A