IPD50P04P4L11ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Polarity :

P-Channel

Product Category :

MOSFET

Vgs (Max) :

+5V, -16V

Product Status :

Active

Maximum Operating Temperature :

+ 175 C

Transistor Type :

1 P-Channel

Operating Temperature :

-55°C ~ 175°C (TJ)

FET Type :

P-Channel

Channel Mode :

Enhancement

Series :

OptiMOS®-P2

Reach Compliance Code :

Compliant

Minimum Operating Temperature :

- 55 C

Gate Charge (Qg) (Max) @ Vgs :

59 nC @ 10 V

Brand :

Infineon Technologies

Rds On (Max) @ Id, Vgs :

10.6mOhm @ 50A, 10V

Vgs(th) (Max) @ Id :

2.2V @ 85µA

Supplier Device Package :

PG-TO252-3-313

Channel Type :

P Channel

Power Dissipation :

58

Number of Channels :

1 Channel

Subcategory :

MOSFETs

Manufacturer :

Infineon

Mounting Style :

SMD/SMT

Qualification :

AEC-Q101

Power Dissipation (Max) :

58W (Tc)

Rise Time :

9 ns

MSL :

MSL 1 - Unlimited

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

Package / Case :

TC252-3-313

Continuous Drain Current Id :

50

Input Capacitance (Ciss) (Max) @ Vds :

3900 pF @ 25 V

Drain to Source Voltage (Vdss) :

40 V

Packaging :

Cut Tape

Technology :

Si

Product Type :

MOSFET

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

Factory Lead Time :

12 Weeks

RoHS :

Details

Base Product Number :

IPD50P04

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

50A (Tc)