IPD50P04P413ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C ~ 175°C (TJ)

Product Type :

MOSFET

Rise Time :

10 ns

Series :

OptiMOS?-P2

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

50A (Tc)

Qualification :

AEC-Q101

Manufacturer :

Infineon

Power Dissipation (Max) :

58W (Tc)

Input Capacitance (Ciss) (Max) @ Vds :

3670 pF @ 25 V

Pin Count :

3

Package :

Digi-Reel?

FET Type :

P-Channel

Power Dissipation :

58

Continuous Drain Current Id :

50

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Minimum Operating Temperature :

- 55 C

Drain to Source Voltage (Vdss) :

40 V

Channel Mode :

Enhancement

Brand :

Infineon Technologies

Mounting Style :

SMD/SMT

Gate Charge (Qg) (Max) @ Vgs :

51 nC @ 10 V

RoHS :

Details

Product Status :

Active

Package Type :

DPAK (TO-252)

Vgs(th) (Max) @ Id :

4V @ 85µA

Mounting Type :

Surface Mount

FET Feature :

-

Supplier Device Package :

PG-TO252-3-313

Rds On (Max) @ Id, Vgs :

12.6mOhm @ 50A, 10V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Product Category :

MOSFET

Subcategory :

MOSFETs

Transistor Polarity :

P-Channel

Number of Elements per Chip :

1

Channel Type :

P

Number of Channels :

1 Channel

Transistor Type :

1 P-Channel

Base Product Number :

IPD50P04

Packaging :

Cut Tape

Maximum Operating Temperature :

+ 175 C