IPD50P04P413ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Reference Standard :

AEC-Q101

Rise Time :

10ns

FET Type :

P-Channel

Power Dissipation-Max :

58W Tc

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Avalanche Energy Rating (Eas) :

18 mJ

Lead Free :

Contains Lead

Number of Pins :

3

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.0126Ohm

Number of Elements :

1

Continuous Drain Current (ID) :

50A

Number of Terminations :

2

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Series :

OptiMOS™

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate to Source Voltage (Vgs) :

20V

Reach Compliance Code :

not_compliant

Factory Lead Time :

26 Weeks

Turn On Delay Time :

17 ns

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 10V

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

20A

Max Dual Supply Voltage :

-40V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

40V

Rds On (Max) @ Id, Vgs :

12.6m Ω @ 50A, 10V

Turn-Off Delay Time :

22 ns

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Halogen Free :

Halogen Free

Fall Time (Typ) :

28 ns

Operating Temperature :

-55°C~175°C TJ

Published :

2011

Input Capacitance (Ciss) (Max) @ Vds :

3670pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 85µA