IPD50N08S413ATMA1
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- Mfr.Part #
- IPD50N08S413ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 50A TO252-3
- Stock
- 6,683
- In Stock ：
- 6,683
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Case Connection :
- DRAIN
- Power Dissipation-Max :
- 72W Tc
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Published :
- 2013
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Series :
- Automotive, AEC-Q101, OptiMOS™
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 1711pF @ 25V
- Halogen Free :
- Halogen Free
- Reach Compliance Code :
- not_compliant
- Rds On (Max) @ Id, Vgs :
- 13.2m Ω @ 50A, 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Factory Lead Time :
- 12 Weeks
- Terminal Form :
- Gull wing
- Max Dual Supply Voltage :
- 80V
- Terminal Position :
- Single
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 4V @ 33µA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 2
- FET Type :
- N-Channel
- Power Dissipation :
- 72W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Avalanche Energy Rating (Eas) :
- 76 mJ
- Lead Free :
- Contains Lead
- Pulsed Drain Current-Max (IDM) :
- 200A
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-30 Code :
- R-PSSO-G2
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 50A
- Mount :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Vgs (Max) :
- ±20V
- Datasheets
- IPD50N08S413ATMA1
N-Channel Tape & Reel (TR) 13.2m Ω @ 50A, 10V ±20V 1711pF @ 25V 30nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD50N08S413ATMA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 76 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1711pF @ 25V.This device conducts a continuous drain current (ID) of 50A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 200A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 80V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPD50N08S413ATMA1 Features
the avalanche energy rating (Eas) is 76 mJ
a continuous drain current (ID) of 50A
based on its rated peak drain current 200A.
IPD50N08S413ATMA1 Applications
There are a lot of Infineon Technologies
IPD50N08S413ATMA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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