IPD50N04S408ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

Number of Elements :

1

Transistor Element Material :

SILICON

Power Dissipation-Max :

46W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

22.4nC @ 10V

Drain-source On Resistance-Max :

0.0079Ohm

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

7.9m Ω @ 50A, 10V

DS Breakdown Voltage-Min :

40V

Surface Mount :

yes

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Temperature :

-55°C~175°C TJ

Published :

2010

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

50A

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 17μA

Factory Lead Time :

12 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

1780pF @ 6V

Pulsed Drain Current-Max (IDM) :

200A

JESD-30 Code :

R-PSSO-G2

Reference Standard :

AEC-Q101

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

55 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Series :

OptiMOS™

Reach Compliance Code :

not_compliant

Current - Continuous Drain (Id) @ 25°C :

50A Tc

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

40V