IPD50N04S309ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

50A

Turn-Off Delay Time :

16 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

200A

Mount :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Lead Free :

Contains Lead

Case Connection :

DRAIN

Number of Terminations :

2

Factory Lead Time :

12 Weeks

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

1750pF @ 25V

Reach Compliance Code :

not_compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

63W Tc

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Rise Time :

7ns

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Published :

2009

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

9m Ω @ 50A, 10V

ECCN Code :

EAR99

Fall Time (Typ) :

6 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Dual Supply Voltage :

40V

Turn On Delay Time :

11 ns

Gate to Source Voltage (Vgs) :

20V

Series :

OptiMOS™

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

4V @ 28μA

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.009Ohm

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Finish :

Tin (Sn)

Avalanche Energy Rating (Eas) :

140 mJ

Halogen Free :

Halogen Free

Number of Pins :

3