IPD25N06S2-40ATMA1
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- Mfr.Part #
- IPD25N06S2-40ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- IPD25N06 - 55V-60V N-CHANNEL AUT
- Stock
- 12,905
- In Stock ：
- 12,905
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Halogen Free :
- Halogen Free
- Series :
- OptiMOS™
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Power Dissipation-Max :
- 68W Tc
- Number of Terminations :
- 2
- Terminal Position :
- Single
- Packaging :
- Tape and Reel (TR)
- Continuous Drain Current (ID) :
- 29A
- Lead Free :
- Contains Lead
- Terminal Form :
- Gull wing
- Case Connection :
- DRAIN
- Vgs (Max) :
- ±20V
- Published :
- 2006
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 13A, 10V
- Transistor Element Material :
- SILICON
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-30 Code :
- R-PSSO-G2
- Drain-source On Resistance-Max :
- 0.04Ohm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 29A Tc
- Rise Time :
- 20ns
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 8 ns
- Operating Temperature :
- -55°C~175°C TJ
- Avalanche Energy Rating (Eas) :
- 80 mJ
- Turn-Off Delay Time :
- 18 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 18nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Surface Mount
- Max Dual Supply Voltage :
- 55V
- Input Capacitance (Ciss) (Max) @ Vds :
- 513pF @ 25V
- FET Type :
- N-Channel
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Pulsed Drain Current-Max (IDM) :
- 116A
- Vgs(th) (Max) @ Id :
- 4V @ 26μA
- Fall Time (Typ) :
- 19 ns
- Datasheets
- IPD25N06S2-40ATMA1
N-Channel Tape & Reel (TR) 40m Ω @ 13A, 10V ±20V 513pF @ 25V 18nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD25N06S240ATMA1 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 80 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 513pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 29A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 18 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 116A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 8 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 55V, it supports the maximal dual supply voltage.By using drive voltage (10V), this device helps reduce its overall power consumption.
IPD25N06S240ATMA1 Features
the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 29A
the turn-off delay time is 18 ns
based on its rated peak drain current 116A.
IPD25N06S240ATMA1 Applications
There are a lot of Infineon Technologies
IPD25N06S240ATMA1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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