IPD22N08S2L50ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

94 mJ

Continuous Drain Current (ID) :

27A

Number of Pins :

3

Pulsed Drain Current-Max (IDM) :

108A

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Case Connection :

DRAIN

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Position :

Single

Lead Free :

Contains Lead

Halogen Free :

Halogen Free

FET Type :

N-Channel

Max Dual Supply Voltage :

75V

Published :

2006

Terminal Finish :

Tin (Sn)

Series :

OptiMOS™

Rds On (Max) @ Id, Vgs :

50m Ω @ 50A, 10V

Vgs (Max) :

±20V

Reference Standard :

AEC-Q101

Reach Compliance Code :

not_compliant

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.065Ohm

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Additional Feature :

ULTRA LOW RESISTANCE

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Power Dissipation-Max :

75W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2V @ 31μA

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

630pF @ 25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Factory Lead Time :

10 Weeks

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Number of Elements :

1