IPD09N03LA G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1642pF @ 15V

Series :

OptiMOS™

Transistor Element Material :

SILICON

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2V @ 20μA

JEDEC-95 Code :

TO-252AA

Additional Feature :

LOGIC LEVEL COMPATIBLE

Terminal Form :

Gull wing

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 5V

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.0148Ohm

Number of Elements :

1

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Surface Mount :

yes

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

25V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rds On (Max) @ Id, Vgs :

8.6m Ω @ 30A, 10V

DS Breakdown Voltage-Min :

25V

Packaging :

Tape and Reel (TR)

Published :

2008

Peak Reflow Temperature (Cel) :

260

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Pin Count :

4

Power Dissipation-Max :

63W Tc

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

75 mJ

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Terminal Finish :

MATTE TIN

Reach Compliance Code :

Compliant

Pulsed Drain Current-Max (IDM) :

350A

Drain Current-Max (Abs) (ID) :

50A

Vgs (Max) :

±20V

RoHS Status :

RoHS Compliant