IPD034N06N3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Fall Time (Typ) :

16 ns

Published :

2008

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

161ns

Continuous Drain Current (ID) :

100A

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Factory Lead Time :

18 Weeks

Number of Pins :

3

Pbfree Code :

No

Terminal Position :

Single

Transistor Application :

SWITCHING

Lead Free :

Contains Lead

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

400A

Number of Elements :

1

Turn-Off Delay Time :

63 ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pin Count :

4

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

11000pF @ 30V

ECCN Code :

EAR99

Turn On Delay Time :

38 ns

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Case Connection :

DRAIN

Vgs (Max) :

±20V

Reach Compliance Code :

not_compliant

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

3.4m Ω @ 100A, 10V

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

4V @ 93µA

JEDEC-95 Code :

TO-252AA

JESD-609 Code :

e3

Power Dissipation-Max :

167W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Halogen Free :

Halogen Free

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Series :

OptiMOS™

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

167W

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

Tin (Sn)

Max Dual Supply Voltage :

60V

Configuration :

SINGLE WITH BUILT-IN DIODE