IPD082N10N3GBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

not_compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pin Count :

3

Vgs(th) (Max) @ Id :

3.5V @ 75μA

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Pbfree Code :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

8.2m Ω @ 73A, 10V

Drain Current-Max (Abs) (ID) :

80A

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant

Terminal Position :

Single

JESD-609 Code :

e3

Published :

2011

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

100V

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

320A

Series :

OptiMOS™

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

110 mJ

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

DS Breakdown Voltage-Min :

100V

Power Dissipation-Max :

125W Tc

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.0082Ohm

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

3980pF @ 50V

Surface Mount :

yes