IPD082N10N3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

OptiMOS™

Fall Time (Typ) :

8 ns

Operating Mode :

ENHANCEMENT MODE

Published :

2010

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time :

18 ns

Mount :

Surface Mount

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

8.2m Ω @ 73A, 10V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Transistor Element Material :

SILICON

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.0082Ohm

Terminal Form :

Gull wing

Reach Compliance Code :

not_compliant

Gate to Source Voltage (Vgs) :

20V

Max Dual Supply Voltage :

100V

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Number of Pins :

3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

FET Type :

N-Channel

Transistor Application :

SWITCHING

Factory Lead Time :

18 Weeks

Case Connection :

DRAIN

Rise Time :

42ns

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

125W Tc

Continuous Drain Current (ID) :

80A

Number of Terminations :

2

Turn-Off Delay Time :

31 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

3.5V @ 75μA

Input Capacitance (Ciss) (Max) @ Vds :

3980pF @ 50V

Avalanche Energy Rating (Eas) :

110 mJ

Number of Elements :

1