IPD053N08N3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

90A

Rds On (Max) @ Id, Vgs :

5.3m Ω @ 90A, 10V

Vgs(th) (Max) @ Id :

3.5V @ 90µA

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

38 ns

Power Dissipation :

150W

Terminal Position :

Single

Lead Free :

Contains Lead

Number of Terminations :

2

Operating Temperature :

-55°C~175°C TJ

Series :

OptiMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

18 ns

Published :

2008

Halogen Free :

Halogen Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

10 ns

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JEDEC-95 Code :

TO-252AA

Gate Charge (Qg) (Max) @ Vgs :

69nC @ 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Input Capacitance (Ciss) (Max) @ Vds :

4750pF @ 40V

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Rise Time :

66ns

Transistor Application :

SWITCHING

Factory Lead Time :

18 Weeks

Power Dissipation-Max :

150W Tc

Case Connection :

DRAIN

Terminal Form :

Gull wing

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

90A Tc

JESD-30 Code :

R-PSSO-G2

Number of Pins :

3

Mount :

Surface Mount

Max Dual Supply Voltage :

80V

Avalanche Energy Rating (Eas) :

190 mJ

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V