IPD04N03LB G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

RoHS Compliant

Case Connection :

DRAIN

Surface Mount :

yes

Series :

OptiMOS™

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Published :

2008

DS Breakdown Voltage-Min :

30V

JESD-30 Code :

R-PSSO-G2

JEDEC-95 Code :

TO-252AA

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Pin Count :

4

Vgs(th) (Max) @ Id :

2V @ 70μA

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

50A

Reach Compliance Code :

Compliant

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 5V

Power Dissipation-Max :

115W Tc

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Drain-source On Resistance-Max :

0.0058ohm

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

5200pF @ 15V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Finish :

MATTE TIN

Drain to Source Voltage (Vdss) :

30V

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

430 mJ

Rds On (Max) @ Id, Vgs :

4.1m Ω @ 50A, 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

200A

Number of Terminations :

2