IPB70P04P409ATMA1
- Mfr.Part #
- IPB70P04P409ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 72A D2PAK
- Stock
- 27,239
- In Stock :
- 27,239
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 9.25mm
- Number of Pins :
- 3
- Drain Current-Max (Abs) (ID) :
- 72A
- Halogen Free :
- Halogen Free
- Polarity/Channel Type :
- P-Channel
- Series :
- Automotive, AEC-Q101, OptiMOS™
- Fall Time (Typ) :
- 31 ns
- Published :
- 2011
- Reach Compliance Code :
- not_compliant
- Operating Temperature :
- -55°C~175°C TJ
- Factory Lead Time :
- 14 Weeks
- Height :
- 4.4mm
- JESD-609 Code :
- e3
- Max Dual Supply Voltage :
- -40V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 72A Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 4V @ 120µA
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Drain-source On Resistance-Max :
- 0.0094Ohm
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Avalanche Energy Rating (Eas) :
- 24 mJ
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- -70A
- Power Dissipation-Max :
- 75W Tc
- Element Configuration :
- Single
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 288A
- Turn On Delay Time :
- 19 ns
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 40V
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Drain to Source Breakdown Voltage :
- -40V
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±20V
- Power Dissipation :
- 75W
- FET Type :
- N-Channel
- Rise Time :
- 15ns
- JESD-30 Code :
- R-PSSO-G2
- Lead Free :
- Contains Lead
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 2
- Rds On (Max) @ Id, Vgs :
- 9.1m Ω @ 70A, 10V
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4810pF @ 25V
- Length :
- 10mm
- Turn-Off Delay Time :
- 24 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- IPB70P04P409ATMA1

N-Channel Tape & Reel (TR) 9.1m Ω @ 70A, 10V ±20V 4810pF @ 25V 70nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB70P04P409ATMA1 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 24 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4810pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has -70A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -40V, and this device has a drainage-to-source breakdown voltage of -40VV.Drain current refers to the maximum continuous current a device can conduct, and it is 72A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 24 ns.Peak drain current is 288A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 19 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to -40V, it supports dual voltages up to the maximum.For this transistor to work, a voltage 40V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IPB70P04P409ATMA1 Features
the avalanche energy rating (Eas) is 24 mJ
a continuous drain current (ID) of -70A
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 24 ns
based on its rated peak drain current 288A.
a 40V drain to source voltage (Vdss)
IPB70P04P409ATMA1 Applications
There are a lot of Infineon Technologies
IPB70P04P409ATMA1 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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