IPB50R199CPATMA1
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- Mfr.Part #
- IPB50R199CPATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 550V 17A TO263-3
- Stock
- 28
- In Stock ：
- 28
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2008
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Max Dual Supply Voltage :
- 500V
- Packaging :
- Tape and Reel (TR)
- Series :
- CoolMOS™
- Power Dissipation-Max :
- 139W Tc
- Drain to Source Voltage (Vdss) :
- 550V
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 3.5V @ 660µA
- JESD-30 Code :
- R-PSSO-G2
- Terminal Finish :
- Tin (Sn)
- Fall Time (Typ) :
- 10 ns
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lead Free :
- Contains Lead
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 17A Tc
- Turn On Delay Time :
- 35 ns
- Operating Temperature :
- -55°C~150°C TJ
- Case Connection :
- DRAIN
- Factory Lead Time :
- 8 Weeks
- Pulsed Drain Current-Max (IDM) :
- 40A
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- Pin Count :
- 4
- Number of Terminations :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Halogen Free :
- Halogen Free
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 1800pF @ 100V
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 17A
- Rds On (Max) @ Id, Vgs :
- 199m Ω @ 9.9A, 10V
- Power Dissipation :
- 139W
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Turn-Off Delay Time :
- 80 ns
- Rise Time :
- 14ns
- Pbfree Code :
- No
- Terminal Position :
- Single
- Radiation Hardening :
- No
- Datasheets
- IPB50R199CPATMA1
N-Channel Tape & Reel (TR) 199m Ω @ 9.9A, 10V ±20V 1800pF @ 100V 45nC @ 10V 550V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB50R199CPATMA1 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1800pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 17A amps.It is [80 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 40A.A turn-on delay time of 35 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 500V, it can support the maximum dual supply voltage.To operate this transistor, you will need a 550V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IPB50R199CPATMA1 Features
a continuous drain current (ID) of 17A
the turn-off delay time is 80 ns
based on its rated peak drain current 40A.
a 550V drain to source voltage (Vdss)
IPB50R199CPATMA1 Applications
There are a lot of Infineon Technologies
IPB50R199CPATMA1 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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