IPB50CN10NGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

50m Ω @ 20A, 10V

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Number of Terminations :

2

Reach Compliance Code :

Unknown

Mounting Type :

Surface Mount

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 20µA

Drain-source On Resistance-Max :

0.05Ohm

Power Dissipation-Max :

44W Tc

ECCN Code :

EAR99

Number of Pins :

3

Transistor Element Material :

SILICON

Pin Count :

4

Continuous Drain Current (ID) :

20A

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

1090pF @ 50V

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

80A

Series :

OptiMOS™

Terminal Finish :

MATTE TIN

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

29 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

100V

Current - Continuous Drain (Id) @ 25°C :

20A Tc

DS Breakdown Voltage-Min :

100V

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

JESD-609 Code :

e3

Published :

2011