IPB180N04S4L01ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2013

Terminal Form :

Gull wing

Power Dissipation-Max :

188W Tc

Number of Terminations :

6

Halogen Free :

Halogen Free

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

245nC @ 10V

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Series :

Automotive, AEC-Q101, OptiMOS™

JESD-30 Code :

R-PSSO-G6

Continuous Drain Current (ID) :

180A

Rds On (Max) @ Id, Vgs :

1.2m Ω @ 100A, 10V

Drain-source On Resistance-Max :

0.0012Ohm

Reach Compliance Code :

not_compliant

Factory Lead Time :

14 Weeks

Number of Elements :

1

Vgs(th) (Max) @ Id :

2.2V @ 140μA

Lead Free :

Contains Lead

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pulsed Drain Current-Max (IDM) :

720A

Input Capacitance (Ciss) (Max) @ Vds :

19100pF @ 25V

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

550 mJ

Max Dual Supply Voltage :

40V

Mount :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

+20V, -16V