IPB180N04S4L01ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G6

Avalanche Energy Rating (Eas) :

550 mJ

Reach Compliance Code :

not_compliant

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

180A

Current - Continuous Drain (Id) @ 25°C :

180A Tc

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Halogen Free :

Halogen Free

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

1.2m Ω @ 100A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

19100pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

245nC @ 10V

Pbfree Code :

yes

Lead Free :

Contains Lead

Pulsed Drain Current-Max (IDM) :

720A

Terminal Form :

Gull wing

Number of Elements :

1

Drain-source On Resistance-Max :

0.0012Ohm

Vgs (Max) :

+20V, -16V

Number of Terminations :

6

Vgs(th) (Max) @ Id :

2.2V @ 140μA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

Automotive, AEC-Q101, OptiMOS™

Terminal Position :

Single

Max Dual Supply Voltage :

40V

Power Dissipation-Max :

188W Tc

Factory Lead Time :

14 Weeks

Mount :

Surface Mount

Case Connection :

DRAIN

Published :

2013

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount