IPB100N06S2L05ATMA2

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Mfr.Part #
IPB100N06S2L05ATMA2
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 55V 100A TO263-3
Stock
7,862
In Stock :
7,862

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Length :
10.31mm
Number of Elements :
1
Drain-source On Resistance-Max :
0.0056Ohm
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Reach Compliance Code :
not_compliant
Height :
4.57mm
Mounting Type :
Surface Mount
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain to Source Breakdown Voltage :
55V
Turn On Delay Time :
18 ns
Gate Charge (Qg) (Max) @ Vgs :
230nC @ 10V
Terminal Form :
Gull wing
Fall Time (Typ) :
24 ns
Series :
OptiMOS™
Pbfree Code :
yes
Input Capacitance (Ciss) (Max) @ Vds :
5660pF @ 25V
Power Dissipation-Max :
300W Tc
Mount :
Surface Mount
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
10 Weeks
Number of Pins :
3
Gate to Source Voltage (Vgs) :
20V
Pulsed Drain Current-Max (IDM) :
400A
Power Dissipation :
300W
Rds On (Max) @ Id, Vgs :
4.4m Ω @ 80A, 10V
Continuous Drain Current (ID) :
100A
Turn-Off Delay Time :
98 ns
Transistor Element Material :
SILICON
ECCN Code :
EAR99
Halogen Free :
Halogen Free
Avalanche Energy Rating (Eas) :
810 mJ
Vgs(th) (Max) @ Id :
2V @ 250μA
Width :
9.45mm
Vgs (Max) :
±20V
Published :
2005
Element Configuration :
Single
Packaging :
Tape and Reel (TR)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Dual Supply Voltage :
55V
Case Connection :
DRAIN
JESD-30 Code :
R-PSSO-G2
FET Type :
N-Channel
Additional Feature :
LOGIC LEVEL COMPATIBLE
Current - Continuous Drain (Id) @ 25°C :
100A Tc
Number of Terminations :
2
Rise Time :
25ns
Operating Temperature :
-55°C~175°C TJ
Operating Mode :
ENHANCEMENT MODE
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPB100N06S2L05ATMA2 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Pins:3, Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, IPB100N06S2L05ATMA2 pinout, IPB100N06S2L05ATMA2 datasheet PDF, IPB100N06S2L05ATMA2 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPB100N06S2L05ATMA2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPB100N06S2L05ATMA2


N-Channel Tape & Reel (TR) 4.4m Ω @ 80A, 10V ±20V 5660pF @ 25V 230nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPB100N06S2L05ATMA2 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 810 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5660pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 100A amps.In this device, the drain-source breakdown voltage is 55V and VGS=55V, so the drain-source breakdown voltage is 55V in this case.It is [98 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 400A.A turn-on delay time of 18 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 55V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

IPB100N06S2L05ATMA2 Features


the avalanche energy rating (Eas) is 810 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 98 ns
based on its rated peak drain current 400A.


IPB100N06S2L05ATMA2 Applications


There are a lot of Infineon Technologies
IPB100N06S2L05ATMA2 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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