IPB160N04S203ATMA4

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

640A

Input Capacitance (Ciss) (Max) @ Vds :

5300pF @ 25V

JESD-30 Code :

R-PSSO-G6

Series :

OptiMOS™

Drain-source On Resistance-Max :

0.0029Ohm

Lead Free :

Contains Lead

Factory Lead Time :

10 Weeks

Rds On (Max) @ Id, Vgs :

2.9m Ω @ 60A, 10V

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

160A

Terminal Form :

Gull wing

ECCN Code :

EAR99

Max Dual Supply Voltage :

40V

Number of Terminations :

6

Transistor Element Material :

SILICON

Pbfree Code :

yes

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2006

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Vgs (Max) :

±20V

Reference Standard :

AEC-Q101

Avalanche Energy Rating (Eas) :

810 mJ

Terminal Position :

Single

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Additional Feature :

ULTRA-LOW RESISTANCE

Power Dissipation-Max :

300W Tc

Mount :

Surface Mount

Halogen Free :

Halogen Free