IPB14N03LA

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

1043pF @ 15V

Continuous Drain Current (ID) :

30A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current Rating :

30A

Series :

OptiMOS™

Peak Reflow Temperature (Cel) :

220

FET Type :

N-Channel

Power Dissipation-Max :

46W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

13.6m Ω @ 30A, 10V

RoHS Status :

Non-RoHS Compliant

Terminal Form :

Gull wing

Pbfree Code :

No

Published :

2003

Gate Charge (Qg) (Max) @ Vgs :

8.3nC @ 5V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Drain-source On Resistance-Max :

0.0136Ohm

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin/Lead (Sn/Pb)

Voltage - Rated DC :

25V

Terminal Position :

Single

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

60 mJ

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2V @ 20μA

Rise Time :

27ns

Mount :

Surface Mount

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Number of Terminations :

2

JESD-609 Code :

e0

Pin Count :

4

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Pulsed Drain Current-Max (IDM) :

210A

Configuration :

SINGLE WITH BUILT-IN DIODE