IPB140N08S404ATMA1
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- Mfr.Part #
- IPB140N08S404ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 140A TO263-7
- Stock
- 6,512
- In Stock ：
- 6,512
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- Continuous Drain Current (ID) :
- 140A
- Number of Elements :
- 1
- Rise Time :
- 10ns
- Terminal Position :
- Single
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Drain-source On Resistance-Max :
- 0.0042Ohm
- Rds On (Max) @ Id, Vgs :
- 4.2m Ω @ 100A, 10V
- JESD-30 Code :
- R-PSSO-G6
- Terminal Form :
- Gull wing
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 560A
- Number of Pins :
- 7
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Factory Lead Time :
- 14 Weeks
- Halogen Free :
- Halogen Free
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 2013
- Current - Continuous Drain (Id) @ 25°C :
- 140A Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs(th) (Max) @ Id :
- 4V @ 100µA
- Power Dissipation-Max :
- 161W Tc
- Mounting Type :
- Surface Mount
- Lead Free :
- Contains Lead
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 80nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 35 ns
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 28 ns
- Mount :
- Surface Mount
- Number of Terminations :
- 6
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 5500pF @ 25V
- Max Dual Supply Voltage :
- 80V
- Turn On Delay Time :
- 18 ns
- Series :
- Automotive, AEC-Q101, OptiMOS™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~175°C TJ
- Avalanche Energy Rating (Eas) :
- 212 mJ
- Reach Compliance Code :
- not_compliant
- Datasheets
- IPB140N08S404ATMA1
N-Channel Tape & Reel (TR) 4.2m Ω @ 100A, 10V ±20V 5500pF @ 25V 80nC @ 10V TO-263-7, D2Pak (6 Leads + Tab)
IPB140N08S404ATMA1 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 212 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5500pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 140A amps.It is [28 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 560A.A turn-on delay time of 18 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 80V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IPB140N08S404ATMA1 Features
the avalanche energy rating (Eas) is 212 mJ
a continuous drain current (ID) of 140A
the turn-off delay time is 28 ns
based on its rated peak drain current 560A.
IPB140N08S404ATMA1 Applications
There are a lot of Infineon Technologies
IPB140N08S404ATMA1 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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