IPB100N08S2L07ATMA1
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- Mfr.Part #
- IPB100N08S2L07ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 100A TO263-3
- Stock
- 17,710
- In Stock ：
- 17,710
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Contains Lead
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 246nC @ 10V
- Number of Terminations :
- 2
- Rds On (Max) @ Id, Vgs :
- 6.5m Ω @ 80A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 5400pF @ 25V
- Case Connection :
- DRAIN
- Continuous Drain Current (ID) :
- 100A
- Terminal Form :
- Gull wing
- Reach Compliance Code :
- not_compliant
- Turn-Off Delay Time :
- 85 ns
- Max Dual Supply Voltage :
- 75V
- Avalanche Energy Rating (Eas) :
- 810 mJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Drain-source On Resistance-Max :
- 0.0087Ohm
- Series :
- OptiMOS™
- Fall Time (Typ) :
- 22 ns
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~175°C TJ
- JESD-30 Code :
- R-PSSO-G2
- Mount :
- Surface Mount
- Pulsed Drain Current-Max (IDM) :
- 400A
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Vgs (Max) :
- ±20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Finish :
- Tin (Sn)
- Terminal Position :
- Single
- ECCN Code :
- EAR99
- Published :
- 2006
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 56ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Halogen Free :
- Halogen Free
- JESD-609 Code :
- e3
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Power Dissipation-Max :
- 300W Tc
- Turn On Delay Time :
- 19 ns
- Packaging :
- Tape and Reel (TR)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Factory Lead Time :
- 10 Weeks
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- IPB100N08S2L07ATMA1
N-Channel Tape & Reel (TR) 6.5m Ω @ 80A, 10V ±20V 5400pF @ 25V 246nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB100N08S2L07ATMA1 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 810 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5400pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 100A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 85 ns.Peak drain current for this device is 400A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 19 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 75V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
IPB100N08S2L07ATMA1 Features
the avalanche energy rating (Eas) is 810 mJ
a continuous drain current (ID) of 100A
the turn-off delay time is 85 ns
based on its rated peak drain current 400A.
IPB100N08S2L07ATMA1 Applications
There are a lot of Infineon Technologies
IPB100N08S2L07ATMA1 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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