IPB09N03LA

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

50A Tc

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

1642pF @ 15V

Qualification Status :

Not Qualified

Current Rating :

50A

Vgs(th) (Max) @ Id :

2V @ 20μA

Transistor Application :

SWITCHING

JESD-609 Code :

e0

Pin Count :

4

RoHS Status :

Non-RoHS Compliant

FET Type :

N-Channel

Published :

2003

Avalanche Energy Rating (Eas) :

75 mJ

Terminal Form :

Gull wing

Power Dissipation-Max :

63W Tc

Packaging :

Tape and Reel (TR)

Terminal Position :

Single

Case Connection :

DRAIN

Mount :

Surface Mount

Additional Feature :

LOGIC LEVEL COMPATIBLE

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Continuous Drain Current (ID) :

50A

Rise Time :

88ns

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.0151Ohm

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Voltage - Rated DC :

25V

Terminal Finish :

Tin/Lead (Sn/Pb)

Series :

OptiMOS™

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

8.9m Ω @ 30A, 10V