IPB017N10N5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Max Junction Temperature (Tj) :

175°C

Power Dissipation-Max :

375W Tc

Halogen Free :

Halogen Free

Series :

OptiMOS™

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

27 ns

Terminal Form :

Gull wing

Max Dual Supply Voltage :

100V

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

FET Type :

N-Channel

Number of Channels :

1

Weight :

1.59999g

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Reach Compliance Code :

not_compliant

Input Capacitance (Ciss) (Max) @ Vds :

15600pF @ 50V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Element Configuration :

Single

Case Connection :

DRAIN

Published :

2004

Gate Charge (Qg) (Max) @ Vgs :

210nC @ 10V

Turn On Delay Time :

33 ns

Rise Time :

23ns

Number of Pins :

7

Continuous Drain Current (ID) :

273A

Height :

4.5mm

Vgs(th) (Max) @ Id :

3.8V @ 279μA

Turn-Off Delay Time :

80 ns

Vgs (Max) :

±20V

Number of Elements :

1

Factory Lead Time :

13 Weeks

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G6

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Number of Terminations :

6

Terminal Finish :

Tin (Sn)

Power Dissipation :

375W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lead Free :

Contains Lead

Rds On (Max) @ Id, Vgs :

1.7m Ω @ 100A, 10V

Drain to Source Breakdown Voltage :

100V

Mounting Type :

Surface Mount