IPB08CNE8N G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

OptiMOS™

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

0.0082Ohm

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

99nC @ 10V

Surface Mount :

yes

Pin Count :

4

Terminal Finish :

MATTE TIN

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

95A

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

95A Tc

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

DS Breakdown Voltage-Min :

85V

RoHS Status :

RoHS Compliant

Transistor Application :

SWITCHING

Terminal Position :

Single

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

8.2m Ω @ 95A, 10V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

262 mJ

Number of Elements :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Published :

2011

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

6690pF @ 40V

Power Dissipation-Max :

167W Tc

Vgs(th) (Max) @ Id :

4V @ 130µA

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Case Connection :

DRAIN

Reach Compliance Code :

Compliant

Pulsed Drain Current-Max (IDM) :

380A

Number of Terminations :

2

Drain to Source Voltage (Vdss) :

85V

Configuration :

SINGLE WITH BUILT-IN DIODE