IPB080N03L G

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Mfr.Part #
IPB080N03L G
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
N-CHANNEL POWER MOSFET
Stock
20,615
In Stock :
20,615

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Halogen Free :
Halogen Free
Mounting Type :
Surface Mount
Number of Pins :
3
Operating Temperature :
-55°C~175°C TJ
Additional Feature :
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Operating Mode :
ENHANCEMENT MODE
Turn-Off Delay Time :
18 ns
Gate Charge (Qg) (Max) @ Vgs :
18nC @ 10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Published :
2008
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Finish :
Tin (Sn)
Continuous Drain Current (ID) :
50A
ECCN Code :
EAR99
Rds On (Max) @ Id, Vgs :
8m Ω @ 30A, 10V
Pbfree Code :
No
Gate to Source Voltage (Vgs) :
20V
Transistor Element Material :
SILICON
Mount :
Surface Mount
Turn On Delay Time :
4.6 ns
JESD-609 Code :
e3
Avalanche Energy Rating (Eas) :
50 mJ
Terminal Form :
Gull wing
Qualification Status :
Not Qualified
Pin Count :
4
Number of Terminations :
2
Drain Current-Max (Abs) (ID) :
48A
Max Dual Supply Voltage :
30V
Number of Elements :
1
Vgs(th) (Max) @ Id :
2.2V @ 250µA
Current - Continuous Drain (Id) @ 25°C :
50A Tc
Transistor Application :
SWITCHING
FET Type :
N-Channel
Rise Time :
3.6ns
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Terminal Position :
Single
Power Dissipation :
47W
Case Connection :
DRAIN
JESD-30 Code :
R-PSSO-G2
Packaging :
Tape and Reel (TR)
Power Dissipation-Max :
47W Tc
Configuration :
SINGLE WITH BUILT-IN DIODE
Fall Time (Typ) :
2.8 ns
Series :
OptiMOS™
Input Capacitance (Ciss) (Max) @ Vds :
1900pF @ 15V
Lead Free :
Contains Lead
Vgs (Max) :
±20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
IPB080N03L G
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPB080N03L G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:3, Operating Temperature:-55°C~175°C TJ, Number of Terminations:2, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, IPB080N03L G pinout, IPB080N03L G datasheet PDF, IPB080N03L G amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPB080N03L G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPB080N03L G


N-Channel Tape & Reel (TR) 8m Ω @ 30A, 10V ±20V 1900pF @ 15V 18nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPB080N03LGATMA1 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 50 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1900pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 50A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 48A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 18 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 4.6 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 30V, it supports the maximal dual supply voltage.By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

IPB080N03LGATMA1 Features


the avalanche energy rating (Eas) is 50 mJ
a continuous drain current (ID) of 50A
the turn-off delay time is 18 ns


IPB080N03LGATMA1 Applications


There are a lot of Infineon Technologies
IPB080N03LGATMA1 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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