IPB075N04LG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 50A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

2V @ 20μA

Continuous Drain Current (ID) :

50A

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

20 mJ

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Series :

OptiMOS™

RoHS Status :

RoHS Compliant

Transistor Application :

SWITCHING

Mount :

Surface Mount

Terminal Finish :

MATTE TIN

Power Dissipation-Max :

56W Tc

Vgs (Max) :

±20V

Number of Terminations :

2

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

40V

Case Connection :

DRAIN

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

40V

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Reach Compliance Code :

Unknown

Operating Temperature :

-55°C~175°C TJ

Additional Feature :

LOGIC LEVEL COMPATIBLE

JESD-609 Code :

e3

Published :

2007

Pin Count :

4

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Terminal Position :

Single

Power Dissipation :

56W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount