IPB073N15N5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

114A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

7.3m Ω @ 57A, 10V

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Reach Compliance Code :

not_compliant

Vgs (Max) :

±20V

Published :

2004

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

8V 10V

Factory Lead Time :

13 Weeks

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

4700pF @ 75V

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

150V

Gate Charge (Qg) (Max) @ Vgs :

61nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

214W Tc

Drain to Source Voltage (Vdss) :

150V

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4.6V @ 160μA

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

456A

Drain-source On Resistance-Max :

0.0073Ohm

Series :

OptiMOS™-5

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

114A

Avalanche Energy Rating (Eas) :

130 mJ