IPB06N03LA

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 40µA

Case Connection :

DRAIN

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rise Time :

25ns

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

220

Published :

2003

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.0095Ohm

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

50A

Input Capacitance (Ciss) (Max) @ Vds :

2653pF @ 15V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Series :

OptiMOS™

Mount :

Surface Mount

RoHS Status :

Non-RoHS Compliant

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

Drain Current-Max (Abs) (ID) :

91A

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Additional Feature :

LOGIC LEVEL COMPATIBLE

Avalanche Energy Rating (Eas) :

225 mJ

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 5V

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Lead Free :

Contains Lead

JESD-609 Code :

e0

Terminal Form :

Gull wing

Pin Count :

4

Number of Elements :

1

Number of Terminations :

2

Power Dissipation-Max :

83W Tc

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

5.9m Ω @ 30A, 10V

Current Rating :

50A

Terminal Finish :

Tin/Lead (Sn/Pb)