IPB06CN10N G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

OptiMOS™

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Reach Compliance Code :

Compliant

Transistor Application :

SWITCHING

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-609 Code :

e3

Terminal Position :

Single

RoHS Status :

RoHS Compliant

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

480 mJ

Drain Current-Max (Abs) (ID) :

100A

ECCN Code :

EAR99

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

400A

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.0062Ohm

DS Breakdown Voltage-Min :

100V

Time@Peak Reflow Temperature-Max (s) :

40

Vgs (Max) :

±20V

Power Dissipation-Max :

214W Tc

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

Published :

2011

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

9200pF @ 50V

Terminal Finish :

MATTE TIN

Drain to Source Voltage (Vdss) :

100V

Surface Mount :

yes

Pin Count :

4

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Rds On (Max) @ Id, Vgs :

6.2m Ω @ 100A, 10V

Vgs(th) (Max) @ Id :

4V @ 180μA

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

139nC @ 10V

Transistor Element Material :

SILICON