IPB05N03LA

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

80A

Pulsed Drain Current-Max (IDM) :

385A

Surface Mount :

yes

Reach Compliance Code :

Compliant

Terminal Form :

Gull wing

Pin Count :

4

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Drain to Source Voltage (Vdss) :

25V

Terminal Finish :

MATTE TIN

DS Breakdown Voltage-Min :

25V

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

190 mJ

Power Dissipation-Max :

94W Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Input Capacitance (Ciss) (Max) @ Vds :

3110pF @ 15V

Vgs(th) (Max) @ Id :

2V @ 50μA

Rds On (Max) @ Id, Vgs :

4.6m Ω @ 55A, 10V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 5V

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

RoHS Compliant

Number of Elements :

1

Additional Feature :

LOGIC LEVEL COMPATIBLE

Series :

OptiMOS™

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

Published :

2006

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Drain-source On Resistance-Max :

0.0078Ohm

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN