IPB057N06NATMA1
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- Mfr.Part #
- IPB057N06NATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 17A/45A D2PAK
- Stock
- 22,167
- In Stock ：
- 22,167
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 3W Ta 83W Tc
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 60V
- Vgs(th) (Max) @ Id :
- 2.8V @ 36μA
- FET Type :
- N-Channel
- Published :
- 2012
- Terminal Form :
- Gull wing
- Terminal Finish :
- Tin (Sn)
- Turn-Off Delay Time :
- 20 ns
- Rds On (Max) @ Id, Vgs :
- 5.7m Ω @ 45A, 10V
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- Current - Continuous Drain (Id) @ 25°C :
- 17A Ta 45A Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Max Dual Supply Voltage :
- 60V
- Halogen Free :
- Halogen Free
- Power Dissipation :
- 83W
- Transistor Application :
- SWITCHING
- Rise Time :
- 12ns
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Packaging :
- Cut Tape (CT)
- Continuous Drain Current (ID) :
- 45A
- Pbfree Code :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 12 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 0.0057Ohm
- Series :
- OptiMOS™
- Factory Lead Time :
- 13 Weeks
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 7 ns
- Pin Count :
- 4
- Number of Terminations :
- 2
- Mount :
- Surface Mount
- Avalanche Energy Rating (Eas) :
- 60 mJ
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~175°C TJ
- Case Connection :
- DRAIN
- Number of Pins :
- 3
- Lead Free :
- Contains Lead
- Input Capacitance (Ciss) (Max) @ Vds :
- 2000pF @ 30V
- Datasheets
- IPB057N06NATMA1
N-Channel Cut Tape (CT) 5.7m Ω @ 45A, 10V ±20V 2000pF @ 30V 27nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB057N06NATMA1 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 60 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2000pF @ 30V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 45A amps.In this device, the drain-source breakdown voltage is 60V and VGS=60V, so the drain-source breakdown voltage is 60V in this case.It is [20 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 12 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 60V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (6V 10V).
IPB057N06NATMA1 Features
the avalanche energy rating (Eas) is 60 mJ
a continuous drain current (ID) of 45A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 20 ns
IPB057N06NATMA1 Applications
There are a lot of Infineon Technologies
IPB057N06NATMA1 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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