IPB051NE8NG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

300W (Tc)

Pin Count :

4

JESD-609 Code :

e3

Manufacturer :

Rochester Electronics LLC

Case Connection :

DRAIN

Number of Terminals :

2

Operating Temperature :

-55°C ~ 175°C (TJ)

Drain to Source Voltage (Vdss) :

85 V

Number of Elements :

1

Surface Mount :

yes

Product Status :

Active

Terminal Finish :

MATTE TIN

Mounting Type :

Surface Mount

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

260

DS Breakdown Voltage-Min :

85 V

Reach Compliance Code :

Unknown

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

400 A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Series :

OptiMOS™2

Drive Voltage (Max Rds On, Min Rds On) :

10V

Transistor Application :

SWITCHING

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

826 mJ

Supplier Device Package :

PG-TO263-3-2

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

12100 pF @ 40 V

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

180 nC @ 10 V

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0051 Ω

Package :

Bulk

Package Shape :

RECTANGULAR

Qualification Status :

COMMERCIAL

Polarity/Channel Type :

N-Channel

FET Feature :

-

JEDEC-95 Code :

TO-263AB

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

100A (Tc)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

5.1mOhm @ 100A, 10V

FET Type :

N-Channel