IPB04N03LAG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

385A

Input Capacitance (Ciss) (Max) @ Vds :

3877pF @ 15V

Surface Mount :

yes

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

25V

JESD-30 Code :

R-PSSO-G2

RoHS Status :

RoHS Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Pin Count :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

107W Tc

Operating Mode :

ENHANCEMENT MODE

Series :

OptiMOS™

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 5V

Terminal Position :

Single

DS Breakdown Voltage-Min :

25V

Drain Current-Max (Abs) (ID) :

80A

Drain-source On Resistance-Max :

0.0064Ohm

Reach Compliance Code :

Compliant

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Finish :

MATTE TIN

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Additional Feature :

LOGIC LEVEL COMPATIBLE

Number of Terminations :

2

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Published :

2006

Number of Elements :

1

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2V @ 60μA

Avalanche Energy Rating (Eas) :

290 mJ

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

3.9m Ω @ 55A, 10V