IPB04N03LA

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

80A

Published :

2003

Additional Feature :

LOGIC LEVEL COMPATIBLE

JESD-609 Code :

e3

Terminal Finish :

MATTE TIN

Current Rating :

80A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

3.9m Ω @ 55A, 10V

Rise Time :

4.5ns

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 5V

Vgs(th) (Max) @ Id :

2V @ 60μA

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Position :

Single

Number of Elements :

1

Power Dissipation-Max :

107W Tc

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Number of Terminations :

2

RoHS Status :

Non-RoHS Compliant

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

385A

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Lead Free :

Contains Lead

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Mount :

Surface Mount

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Pin Count :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Voltage - Rated DC :

25V

Case Connection :

DRAIN

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.0064Ohm

Avalanche Energy Rating (Eas) :

290 mJ

Operating Temperature :

-55°C~175°C TJ

Series :

OptiMOS™

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

3877pF @ 15V