IPB048N15N5LFATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

150V

Drain to Source Voltage (Vdss) :

150V

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Power Dissipation-Max :

313W Tc

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 75V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

2

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

120A

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Feedback Cap-Max (Crss) :

23 pF

Terminal Form :

Gull wing

Factory Lead Time :

13 Weeks

Pulsed Drain Current-Max (IDM) :

480A

Terminal Finish :

Tin (Sn)

Drain Current-Max (Abs) (ID) :

120A

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Series :

OptiMOS™-5

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

30 mJ

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

84nC @ 10V

Number of Elements :

1

Drain-source On Resistance-Max :

0.0048Ohm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FET Type :

N-Channel

Transistor Application :

SWITCHING

Published :

2013

Reach Compliance Code :

not_compliant

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

4.8m Ω @ 100A, 10V

Vgs(th) (Max) @ Id :

4.9V @ 255μA

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE