IPB048N06LG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Technology :

MOSFET (Metal Oxide)

Pin Count :

4

DS Breakdown Voltage-Min :

60 V

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Supplier Device Package :

PG-TO-263-3-2

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

4.7mOhm @ 100A, 10V

Drain-source On Resistance-Max :

0.0044 Ω

Gate Charge (Qg) (Max) @ Vgs :

225 nC @ 10 V

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Manufacturer :

Infineon Technologies AG

Vgs(th) (Max) @ Id :

2V @ 270µA

Package Shape :

RECTANGULAR

Series :

OptiMOS®

Current - Continuous Drain (Id) @ 25°C :

100A (Tc)

Case Connection :

DRAIN

Channel Type :

N

Terminal Form :

Gull wing

FET Feature :

-

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Reach Compliance Code :

Compliant

Operating Mode :

ENHANCEMENT MODE

Package :

Bulk

Input Capacitance (Ciss) (Max) @ Vds :

7600 pF @ 30 V

Surface Mount :

yes

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

810 mJ

Product Status :

Active

Pulsed Drain Current-Max (IDM) :

400 A

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±20V

Operating Temperature :

-55°C ~ 175°C (TJ)

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Polarity/Channel Type :

N-Channel

Additional Feature :

AVALANCHE RATED

Power Dissipation (Max) :

300W (Tc)

Drain Current-Max (Abs) (ID) :

100 A

Subcategory :

FET General Purpose Power

Number of Terminals :

2

Terminal Finish :

MATTE TIN

Continuous Drain Current Id :

100

JEDEC-95 Code :

TO-263AB

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

60 V

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max (Abs) :

300 W

Factory Lead Time :

1 Week