IPB034N06N3G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

149 mJ

Channel Type :

N

DS Breakdown Voltage-Min :

60 V

Input Capacitance (Ciss) (Max) @ Vds :

11000 pF @ 30 V

Configuration :

SINGLE WITH BUILT-IN DIODE

Subcategory :

FET General Purpose Power

Rds On (Max) @ Id, Vgs :

3.4mOhm @ 100A, 10V

Polarity/Channel Type :

N-Channel

Terminal Finish :

MATTE TIN

Case Connection :

DRAIN

Package Shape :

RECTANGULAR

Product Status :

Active

Package :

Bulk

JESD-30 Code :

R-PSSO-G6

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 93µA

Number of Elements :

1

Power Dissipation-Max (Abs) :

167 W

JESD-609 Code :

e3

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Pin Count :

7

Operating Temperature :

-55°C ~ 175°C (TJ)

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

400 A

Number of Terminals :

6

Surface Mount :

yes

Drive Voltage (Max Rds On, Min Rds On) :

10V

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Factory Lead Time :

1 Week

Package / Case :

TO-263-7, D²Pak (6 Leads + Tab)

Current - Continuous Drain (Id) @ 25°C :

100A (Tc)

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

60 V

FET Feature :

-

Manufacturer :

Infineon Technologies AG

Reach Compliance Code :

Compliant

Terminal Position :

Single

Transistor Element Material :

SILICON

Series :

OptiMOS™ 3

Continuous Drain Current Id :

100

Gate Charge (Qg) (Max) @ Vgs :

130 nC @ 10 V

Technology :

MOSFET (Metal Oxide)

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

100 A

Supplier Device Package :

PG-TO263-7-3

Power Dissipation (Max) :

167W (Tc)

Drain-source On Resistance-Max :

0.0034 Ω

FET Technology :

METAL-OXIDE SEMICONDUCTOR