IPB027N10N5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

2.7m Ω @ 100A, 10V

Element Configuration :

Single

Drain-source On Resistance-Max :

0.0027Ohm

Vgs (Max) :

±20V

Weight :

3.949996g

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Terminal Form :

Gull wing

Turn-Off Delay Time :

52 ns

Vgs(th) (Max) @ Id :

3.8V @ 184μA

Pulsed Drain Current-Max (IDM) :

480A

Drain to Source Breakdown Voltage :

100V

Gate Charge (Qg) (Max) @ Vgs :

139nC @ 10V

Series :

OptiMOS™

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Lead Free :

Contains Lead

Max Dual Supply Voltage :

100V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

13 Weeks

Gate to Source Voltage (Vgs) :

20V

Reach Compliance Code :

not_compliant

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Number of Channels :

1

ECCN Code :

EAR99

Number of Elements :

1

Power Dissipation-Max :

250W Tc

Pbfree Code :

yes

FET Type :

N-Channel

Published :

2015

Mount :

Surface Mount

Rise Time :

15ns

Fall Time (Typ) :

17 ns

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Continuous Drain Current (ID) :

120A

Halogen Free :

Halogen Free

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

26 ns

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Input Capacitance (Ciss) (Max) @ Vds :

10300pF @ 50V