IPB024N08N5ATMA1
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- Mfr.Part #
- IPB024N08N5ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 120A D2PAK
- Stock
- 3,032
- In Stock ：
- 3,032
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Contains Lead
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- not_compliant
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Power Dissipation-Max :
- 214W Tc
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 14ns
- Number of Elements :
- 1
- Halogen Free :
- Halogen Free
- Case Connection :
- DRAIN
- JESD-30 Code :
- R-PSSO-G2
- Continuous Drain Current (ID) :
- 120A
- Vgs(th) (Max) @ Id :
- 3.8V @ 154μA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Avalanche Energy Rating (Eas) :
- 374 mJ
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±20V
- Fall Time (Typ) :
- 15 ns
- Published :
- 2013
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 46 ns
- Number of Terminations :
- 2
- Mounting Type :
- Surface Mount
- Turn On Delay Time :
- 22 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 123nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Number of Channels :
- 1
- Transistor Application :
- SWITCHING
- Pulsed Drain Current-Max (IDM) :
- 480A
- Factory Lead Time :
- 13 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 8970pF @ 40V
- Max Dual Supply Voltage :
- 80V
- Rds On (Max) @ Id, Vgs :
- 2.4m Ω @ 100A, 10V
- Drain-source On Resistance-Max :
- 0.0024Ohm
- Weight :
- 3.949996g
- Series :
- OptiMOS™
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- IPB024N08N5ATMA1
N-Channel Tape & Reel (TR) 2.4m Ω @ 100A, 10V ±20V 8970pF @ 40V 123nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB024N08N5ATMA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 374 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 8970pF @ 40V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 46 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 480A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 22 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 80V.In addition to reducing power consumption, this device uses drive voltage (6V 10V).
IPB024N08N5ATMA1 Features
the avalanche energy rating (Eas) is 374 mJ
a continuous drain current (ID) of 120A
the turn-off delay time is 46 ns
based on its rated peak drain current 480A.
IPB024N08N5ATMA1 Applications
There are a lot of Infineon Technologies
IPB024N08N5ATMA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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