IPB022N04LG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

90A (Tc)

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

40 V

Supplier Device Package :

PG-TO263-3-2

Drain Current-Max (Abs) (ID) :

90 A

Terminal Finish :

MATTE TIN

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

166 nC @ 10 V

Subcategory :

FET General Purpose Power

Power Dissipation (Max) :

167W (Tc)

Product Status :

Active

Technology :

MOSFET (Metal Oxide)

Reach Compliance Code :

Compliant

Vgs (Max) :

±20V

FET Type :

N-Channel

Surface Mount :

yes

Case Connection :

DRAIN

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Package :

Bulk

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.0029 Ω

Terminal Position :

Single

Channel Type :

N

Continuous Drain Current Id :

90

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

2V @ 95µA

Input Capacitance (Ciss) (Max) @ Vds :

13000 pF @ 20 V

Power Dissipation-Max (Abs) :

167 W

JEDEC-95 Code :

TO-263AB

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Avalanche Energy Rating (Eas) :

150 mJ

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

400 A

Rds On (Max) @ Id, Vgs :

2.2mOhm @ 90A, 10V

FET Feature :

-

Series :

OptiMOS™ 3

JESD-30 Code :

R-PSSO-G2

Package Shape :

RECTANGULAR

Manufacturer :

Infineon Technologies AG

Polarity/Channel Type :

N-Channel

Number of Elements :

1

Additional Feature :

LOGIC LEVEL COMPATIBLE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C ~ 175°C (TJ)

Drain to Source Voltage (Vdss) :

40 V

Number of Terminals :

2

Peak Reflow Temperature (Cel) :

260

Pin Count :

4