IPB022N04LG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Channel Type :

N

Technology :

MOSFET (Metal Oxide)

Product Status :

Active

Pulsed Drain Current-Max (IDM) :

400 A

Drain Current-Max (Abs) (ID) :

90 A

Drain to Source Voltage (Vdss) :

40 V

Surface Mount :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current Id :

90

Manufacturer :

Infineon Technologies AG

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Number of Terminals :

2

Gate Charge (Qg) (Max) @ Vgs :

166 nC @ 10 V

Operating Temperature :

-55°C ~ 175°C (TJ)

Package Shape :

RECTANGULAR

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

13000 pF @ 20 V

Avalanche Energy Rating (Eas) :

150 mJ

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

90A (Tc)

Vgs(th) (Max) @ Id :

2V @ 95µA

Reach Compliance Code :

Compliant

JEDEC-95 Code :

TO-263AB

Subcategory :

FET General Purpose Power

Transistor Element Material :

SILICON

Additional Feature :

LOGIC LEVEL COMPATIBLE

Pin Count :

4

Supplier Device Package :

PG-TO263-3-2

Package :

Bulk

Terminal Finish :

MATTE TIN

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Power Dissipation-Max (Abs) :

167 W

DS Breakdown Voltage-Min :

40 V

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

2.2mOhm @ 90A, 10V

Polarity/Channel Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Power Dissipation (Max) :

167W (Tc)

FET Feature :

-

Case Connection :

DRAIN

Terminal Position :

Single

Drain-source On Resistance-Max :

0.0029 Ω

Number of Elements :

1

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Series :

OptiMOS™ 3