IPB021N06N3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.0021Ohm

Pulsed Drain Current-Max (IDM) :

480A

Published :

2011

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Packaging :

Tape and Reel (TR)

Terminal Finish :

MATTE TIN

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

275nC @ 10V

Rds On (Max) @ Id, Vgs :

2.1m Ω @ 100A, 10V

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

DS Breakdown Voltage-Min :

60V

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Terminal Position :

Single

Case Connection :

DRAIN

Series :

OptiMOS™

Surface Mount :

yes

Power Dissipation-Max :

250W Tc

Pin Count :

4

Drain to Source Voltage (Vdss) :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 196µA

Drain Current-Max (Abs) (ID) :

120A

Avalanche Energy Rating (Eas) :

634 mJ

Input Capacitance (Ciss) (Max) @ Vds :

23000pF @ 30V

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1