IPB021N06N3G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Mounting Type :

Surface Mount

Polarity/Channel Type :

N-Channel

Qualification Status :

Not Qualified

Rise Time :

80 ns

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

JESD-609 Code :

e3

JEDEC-95 Code :

TO-263AB

Avalanche Energy Rating (Eas) :

634 mJ

Operating Temperature :

-55°C ~ 175°C (TJ)

FET Feature :

-

Element Configuration :

Single

Turn-Off Delay Time :

79 ns

JESD-30 Code :

R-PSSO-G2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

120 A

Drain to Source Voltage (Vdss) :

60 V

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Input Capacitance (Ciss) (Max) @ Vds :

23000 pF @ 30 V

Gate to Source Voltage (Vgs) :

20 V

Number of Terminals :

2

Terminal Form :

Gull wing

Power Dissipation :

250 W

Drain to Source Resistance :

2.1 mΩ

Technology :

MOSFET (Metal Oxide)

Max Power Dissipation :

250 W

Surface Mount :

yes

Drain to Source Breakdown Voltage :

60 V

Terminal Position :

Single

Vgs(th) (Max) @ Id :

4V @ 196µA

Power Dissipation-Max (Abs) :

250 W

Reach Compliance Code :

Compliant

Transistor Application :

SWITCHING

Rds On Max :

2.1 mΩ

Gate Charge (Qg) (Max) @ Vgs :

275 nC @ 10 V

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

120A (Tc)

Series :

OptiMOS™ 3

Min Operating Temperature :

-55 °C

Power Dissipation (Max) :

250W (Tc)

Package :

Bulk

Mount :

Surface Mount

Subcategory :

FET General Purpose Power

Radiation Hardening :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

60 V

Peak Reflow Temperature (Cel) :

260

Max Operating Temperature :

175 °C

Continuous Drain Current Id :

120

Channel Type :

N

Input Capacitance :

23 nF

RoHS :

Compliant

Product Status :

Active

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On, Min Rds On) :

10V

Pin Count :

4

Pulsed Drain Current-Max (IDM) :

480 A

Manufacturer :

Infineon Technologies AG

Turn-On Delay Time :

41 ns

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

2.4mOhm @ 100A, 10V

Drain Current-Max (Abs) (ID) :

120 A

Supplier Device Package :

PG-TO263-3

Terminal Finish :

MATTE TIN

Drain-source On Resistance-Max :

0.0021 Ω

Package Shape :

RECTANGULAR