IPB019N08N3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

206nC @ 10V

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

1.9m Ω @ 100A, 10V

Turn-Off Delay Time :

86 ns

Lead Free :

Contains Lead

Series :

OptiMOS™

Halogen Free :

Halogen Free

Pbfree Code :

No

Threshold Voltage :

2.8V

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

180A

FET Type :

N-Channel

Pin Count :

7

Power Dissipation :

300W

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Max Junction Temperature (Tj) :

175°C

Mounting Type :

Surface Mount

Factory Lead Time :

13 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

80V

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G6

Height :

4.5mm

Number of Channels :

1

Input Capacitance (Ciss) (Max) @ Vds :

14200pF @ 40V

Published :

2008

Mount :

Surface Mount

Power Dissipation-Max :

300W Tc

Fall Time (Typ) :

33 ns

Operating Temperature :

-55°C~175°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Number of Elements :

1

Terminal Form :

Gull wing

Rise Time :

73ns

Vgs(th) (Max) @ Id :

3.5V @ 270µA

Vgs (Max) :

±20V

Turn On Delay Time :

28 ns

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Gate to Source Voltage (Vgs) :

20V

Max Dual Supply Voltage :

80V

Number of Pins :

7

Terminal Position :

Single

Transistor Application :

SWITCHING

Number of Terminations :

6

Case Connection :

DRAIN